The first generation of NXP GaN products will be unique broadband amplifiers suitable for applications requiring high RF performance at various frequencies up to 3.5 GHz. NXP's first-generation GaN process is specifically designed for products that work under a 50V supply voltage, which can achieve first-class efficiency and linearity. Such products will use industry-standard package sizes, allowing customers to use NXP products in existing designs without changing the mechanical design. NXP's new generation of GaN devices will be super efficient, bringing performance breakthroughs to the largest RF power device segment-cellular base stations. In turn, this technology breaks the linear amplifier topology with the concept of a switch mode power amplifier (SMPA). NXP is committed to making the most of the technology in the entire product range, which will also make the products suitable for higher frequency applications up to 10 GHz.